Alexander Tonkikh

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Dmitry FirsovPeter the Great St. Petersburg Polytechnic University (SPbPU)Verified email at rphf.spbstu.ru
Vadim Yu. Panevin, Вадим Юрьевич...Peter the Great St.Petersburg Polytechnic University (SPbPU)Verified email at rphf.spbstu.ru
Vadim A. Shalygin (Шалыгин В.А.)Peter the Great St.Petersburg Polytechnic University (SPbPU)Verified email at rphf.spbstu.ru
Jens W. TommSenior Researcher at MBI berlinVerified email at mbi-berlin.de
Nikolay LedentsovVI Systems GmbHVerified email at v-i-systems.com
Aleksey AndreevScientist and Company Director, A-Modelling Solutions Ltd.Verified email at amodelling.com
Stuart ParkinMax Planck Institute of Microstructure PhysicsVerified email at mpi-halle.mpg.de
Alexandra SuvorovaUniversity of Western AustraliaVerified email at uwa.edu.au
Maxim Ya. Vinnichenko (Винниченко...Peter the Great St.Petersburg Polytechnic University (SPbPU)Verified email at spbstu.ru
Thomas ElsaesserMax Born Institute, Berlin, GermanyVerified email at mbi-berlin.de
Maria FonsecaPhD researcher, Universidade de AveiroVerified email at ua.pt
Maria TchernychevaResearcher at Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Universite Paris-SudVerified email at u-psud.fr
Nikolai SobolevProfessor of Physics, Universidade de AverioVerified email at ua.pt
Eduardo AlvesFull Researcher, DECN, Instituto Superior Técnico, Universidade de LisboaVerified email at tecnico.ulisboa.pt
Belyaev A.E.Institute of semiconductor physicsVerified email at isp.kiev.ua
Levon V. AsryanProfessorVerified email at vt.edu
Valery Yu. DavydovDr. Sci., Chief Researcher, Ioffe InstituteVerified email at mail.ioffe.ru
Alexander N. SmirnovIoffe Physical-Technical Institute, Department of Optic of Solid StateVerified email at mail.ioffe.ru
Marius GrundmannUniversität LeipzigVerified email at physik.uni-leipzig.de
Alexander WeberUniversität LeipzigVerified email at physik.uni-leipzig.de

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Semiconductors Epitaxy Physics LED


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Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment VG Dubrovskii, GE Cirlin, IP Soshnikov, AA Tonkikh, NV Sibirev, ... Physical Review B—Condensed Matter and Materials Physics 71 (20), 205325, 2005	375	2005
Pseudomorphic GeSn/Ge (001) quantum wells: Examining indirect band gap bowing AA Tonkikh, C Eisenschmidt, VG Talalaev, ND Zakharov, J Schilling, ... Applied Physics Letters 103 (3), 2013	144	2013
Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications YSD A. A. Tonkikh, E. N. Voloshina, P. Werner, H. Blumtritt, B. Senkovskiy ... Scientific Reports 6, 23547, 2016	103	2016
Atomic structure of MBE-grown GaAs nanowhiskers IP Soshnikov, GE Cirlin, AA Tonkikh, YB Samsonenko, VG Dubovskii, ... Physics of the Solid State 47, 2213-2218, 2005	88*	2005
On the non‐monotonic lateral size dependence of the height of GaAs nanowhiskers grown by molecular beam epitaxy at high temperature VG Dubrovskii, IP Soshnikov, GE Cirlin, AA Tonkikh, YB Samsonenko, ... physica status solidi (b) 241 (7), R30-R33, 2004	82	2004
Effect of growth kinetics on the structural and optical properties of quantum dot ensembles VG Dubrovskii, GE Cirlin, YG Musikhin, YB Samsonenko, AA Tonkikh, ... Journal of crystal growth 267 (1-2), 47-59, 2004	79	2004
Room-temperature light emission from a highly strained Si/Ge superlattice ND Zakharov, VG Talalaev, P Werner, AA Tonkikh, GE Cirlin Applied physics letters 83 (15), 3084-3086, 2003	69	2003
The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy GE Cirlin, VG Dubrovskii, NV Sibirev, IP Soshnikov, YB Samsonenko, ... Semiconductors 39, 557-564, 2005	58	2005
Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices VG Talalaev, GE Cirlin, AA Tonkikh, ND Zakharov, P Werner, U Gösele, ... Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in …, 2008	48	2008
Room temperature electroluminescence from Ge/Si quantum dots superlattice close to 1.6 μm VG Talalaev, GE Cirlin, AA Tonkikh, ND Zakharov, P Werner physica status solidi (a) 198 (1), R4-R6, 2003	44	2003
Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching N Geyer, N Wollschläger, B Fuhrmann, A Tonkikh, A Berger, P Werner, ... Nanotechnology 26 (24), 245301, 2015	43	2015
Cubic phase Sn-rich GeSn nanocrystals in a Ge matrix AA Tonkikh, ND Zakharov, AA Suvorova, C Eisenschmidt, J Schilling, ... Crystal growth & design 14 (4), 1617-1622, 2014	39	2014
Ge/Si (100) quantum dots grown via a thin Sb layer A Tonkikh, N Zakharov, V Talalaev, P Werner physica status solidi (RRL)–Rapid Research Letters 4 (8‐9), 224-226, 2010	35	2010
Transient spectroscopy of InAs quantum dot molecules VG Talalaev, JW Tomm, ND Zakharov, P Werner, BV Novikov, AA Tonkikh Applied physics letters 85 (2), 284-286, 2004	28	2004
Dependence of structural and optical properties of QD arrays in an InAs/GaAs system on surface temperature and growth rate VG Dubrovskii, YG Musikhin, GE Cirlin, VA Egorov, NK Polyakov, ... Semiconductors 38, 329-334, 2004	26*	2004
Temperature dependence of the quantum dot lateral size in the Ge/Si (100) system AA Tonkikh, VG Dubrovskii, GE Cirlin, VA Egorov, VM Ustinov, P Werner physica status solidi (b) 236 (1), R1-R3, 2003	26	2003
Realization of the Kohn’s theorem in Ge/Si quantum dots with hole gas: Theory and experiment HA Sarkisyan, DB Hayrapetyan, LS Petrosyan, EM Kazaryan, ... Nanomaterials 9 (1), 56, 2019	21	2019
Aperiodic SiSn/Si multilayers for thermoelectric applications AA Tonkikh, ND Zakharov, C Eisenschmidt, HS Leipner, P Werner Journal of crystal growth 392, 49-51, 2014	21	2014
Electron diffraction on GaAs nanowhiskers grown on Si (100) and Si (111) substrates by molecular-beam epitaxy IP Soshnikov, GE Cirlin, AA Tonkikh, VN Nevedomskiĭ, YB Samsonenko, ... Physics of the Solid State 49, 1440-1445, 2007	21	2007
Surfactant‐mediated Stranski–K rastanov islands AA Tonkikh, P Werner physica status solidi (b) 250 (9), 1795-1798, 2013	18	2013

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